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Device Schema

The project file is JSON. DeviceProject remains the backward-compatible class name. ComponentProject is an alias used by the broader roadmap, where the same envelope can represent MOSFETs, diodes, IGBTs, BJTs, op amps, and future component families.

Top-level fields:

  • schema_version
  • component
  • device
  • ratings
  • static
  • dynamic
  • parasitics
  • models
  • provenance

The schema is intentionally permissive in v1.0 so new devices can be supported without migrations. Component profiles define stricter family-specific expectations.

Datasheets that contain several related orderable parts can expose device.series_parts in each generated project. Extraction APIs also return a separate series object and variant_projects list so the UI can require an explicit user choice when the uploaded filename does not identify a default part.

Component Envelope

New projects include:

{
  "component": {
    "family": "mosfet",
    "profile": "mosfet.power"
  }
}

The component.profile value selects the extraction, fitting, validation, and model-generation expectations for that device family. Older project files without this envelope still load.

Minimum Built-In Emitter Inputs

The built-in vdmos-static-fast and abm-basic MOSFET emitters can produce starter models when these fields are present:

  • ratings.vdss_v: drain-source voltage rating in volts.
  • ratings.vgs_on_v, ratings.vgs_off_v: gate drive levels in volts.
  • static.vgs_th_v: temperature-keyed threshold voltage map, for example { "25": 3.8 }.
  • static.rds_on_mohm: temperature-keyed on-resistance map in milliohms.
  • static.gfs_s: forward transconductance in siemens.
  • static.rg_int_ohm: internal gate resistance in ohms.
  • dynamic.capacitance: vds_v, ciss_pf, coss_pf, crss_pf arrays.
  • dynamic.channel_fit.idsat_reference_a and vgs_reference_v: one current point for the smooth ABM channel starter.
  • dynamic.body_diode: vsd_25c_typ_v, trr_ns, qrr_nc, irrm_a.
  • parasitics: package and starter testbench values ld_nh, ls_nh, lg_nh, rg_ext_ohm.

The values may be datasheet typical values, conservative assumptions, or lab fits, but each source should be recorded in provenance.

The built-in diode-basic and diode-abm-dynamic emitters use the diode.power profile and these fields when available:

  • ratings.vrrm_v: repetitive peak reverse-voltage rating in volts.
  • ratings.if_av_a, ratings.ifsm_a: average and surge forward current.
  • static.forward_voltage: vf_v and reference if_a.
  • static.leakage.ir_ua: reverse leakage current.
  • dynamic.junction_capacitance.cj0_pf: starter junction capacitance.
  • dynamic.reverse_recovery: trr_ns, qrr_nc, and optional irrm_a.
  • parasitics: la_nh, lk_nh, ra_ohm, and rk_ohm.

Provenance

Every value extracted from a datasheet should eventually record:

  • source file
  • page
  • table or figure number
  • extraction method
  • confidence
  • whether it is datasheet, fitted, lab-fitted, or assumed

The built-in import-capacitance-csv command appends a provenance item with kind: digitized_capacitance_csv so generated models can be traced back to the curve source.

Capacitance Curves

dynamic.capacitance uses this v1.0 shape:

{
  "vds_v": [0.0, 100.0],
  "ciss_pf": [1000.0, 820.0],
  "coss_pf": [900.0, 240.0],
  "crss_pf": [300.0, 35.0]
}

Values are stored in volts and picofarads because that matches most datasheet plots and SPICE starter tables.

Example

See ../examples/demo_sic_mosfet/device.json.